Normally-OFF Diamond Reverse Blocking MESFET

Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain were in nature. Boron-doped p-channel diamond reported date display the less attractive ON characteristics. Here, transistor delivered a current level of ~1.5 $\mu $ Amm ?1 at negative notation="LaTeX">${V}_{\text {GS}}$ 0.8 V transconductance ( notation="LaTeX">${g}_{m}$ ) notation="LaTeX">$16~\mu Smm , measured room temperature (RT); 425 K, these values rose notation="LaTeX">$\sim 70~\mu for notation="LaTeX">${I}_{\text {DS}}$ value notation="LaTeX">$260~\mu . In cases, negligible leakage was with no breakdown apparent maximum field investigated here notation="LaTeX">$3.7\times 10^{{5}}$ V/m ). demonstrates well-behaved control channel even higher temperatures. high-temperature operation, behavior, diamond’s inherent radiation hardness make this promising harsh environment applications.